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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min) *High Switching Speed APPLICATIONS *Designed for use in converters, inverters, switching regulators and switching control amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCES VCEO VEBO IC ICM IB B BUW87A PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Emitter Current-Continuous Emitter Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 400 400 200 6 10 15 2 3 11 15 62.5 200 -65~200 UNIT V V V V A A A A A A W IBM IE IEM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.8 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUW87A TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH B 200 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 0.65 V VBE(sat) ICES Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.6 1 2 20 V Collector Cutoff Current VCE= VCBO;VBE= 0 VCE= VCBO;VBE= 0; TJ= 150 IC= 3A; VCE= 5V mA hFE DC Current Gain fT Current-Gain--Bandwidth Product IC= 0.5A ; VCE= 5V;ftest= 5MHz 50 MHz Switching Times; Resistive Load s s s ton ts tf Turn-On Time 0.3 0.4 Storage Time IC= 5A; IB1= -IB2= 0.5A;VCC=100V 1.0 1.5 Fall Time 0.15 0.3 isc Websitewww.iscsemi.cn 2 |
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